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AP70T03AGH-HF-3

Part Number	AP70T03AGH-HF-3
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 8, 2014
Detailed Description	Advanced Power Electronics Corp. AP70T03AGH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fa...
Datasheet	AP70T03AGH-HF-3 PDF File

Overview

Advanced Power Electronics Corp.
AP70T03AGH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 9mΩ 60A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S TO-252 (H) The AP70T03AGH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters.
The through-hole TO-251 version (AP70T03AGJ-HF-3) is available where a small PCB footprint is required.
G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 60 43 195 53 0.
36 -55 to 175 -55 to 175 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient(PCB mount)3 Value 2.
8 62.
5 110 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP70T03AGH-HF-3TR AP70T03AGJ-HF-3TB RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube) ©2010 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200309092-3 1/6 Advanced Power Electronics Corp.
AP70T03AGH/J-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
30 1 Typ.
0.
032 35 16.
5 5 10.
3 8.
2 105 21.
4 8.
5 1485 245 170 Max.
Units 9 18 3 1 250 ± 100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BVDSS...

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AP70T03AGH-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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