DatasheetsPDF.com

HBC556

Hi-Sincerity Mocroelectronics
Part Number HBC556
Manufacturer Hi-Sincerity Mocroelectronics
Description PNP EPITAXIAL PLANAR TRANSISTOR
Published Mar 23, 2005
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6422 Issued Date : 1992.11.25 ...
Datasheet PDF File HBC556 PDF File

HBC556
HBC556

Overview
HI-SINCERITY MICROELECTRONICS CORP.
HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6422 Issued Date : 1992.
11.
25 Revised Date : 2005.
02.
04 Page No.
: 1/4 Description The HBC556 is primarily intended for use in driver stage of audio amplifiers.
Features • High Breakdown Voltage: 65V at IC=1mA • High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .
500 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.
.
.
.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)