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H5MS2562JFR-K3M

Part Number	H5MS2562JFR-K3M
Manufacturer	Hynix Semiconductor
Description	Mobile DDR SDRAM 256Mbit (16M x 16bit)
Published	Oct 11, 2014
Detailed Description	256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Ar...
Datasheet	H5MS2562JFR-K3M PDF File

Overview

256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 / July.
2009 1 256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Document Title 256Mbit (4Bank x 4M x 16bits) MOBILE DDR SDRAM Revision History Revision No.
0.
1 0.
2 1.
0 1.
1 1.
2 - Initial Draft - IDD Specification updated - The final version - Insert DDR370 DC/AC Characteristics - Omit a typo in package information History Draft Date May 2008 May 2008 Nov.
2008 Apr.
2009 July.
2009 Remark Preliminary Preliminary This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 / July.
2009 2 Mobile DDR SDRAM 256Mbit (16M x 16bit) H5MS2562JFR Series FEATURES SUMMARY ● Mobile DDR SDRAM clock cycle ● MODE RERISTER SET, EXTENDED MODE REGISTER SET and STATUS REGISTER READ - Keep to the JEDEC Standard regulation (Low Power DDR SDRAM) - Double data rate architecture: two data transfer per ● Mobile DDR SDRAM INTERFACE - x16 bus width - Multiplexed Address (Row address and Column address) ● CAS LATENCY - Programmable CAS latency 2 or 3 supported ● SUPPLY VOLTAGE - 1.
8V device: VDD and VDDQ = 1.
7V to 1.
95V ● BURST LENGTH - Programmable burst length 2 / 4 / 8 with both sequential and interleave mode ● MEMORY CELL ARRAY - 256Mbit (x16 device) = 4M x 4Bank x 16 I/O ● AUTO PRECHARGE - Option for each burst access ● DATA STROBE - x16 device: LDQS and UDQS - Bidirectional, data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver - Data and data mask referenced to both edges of DQS ● AUTO REFRESH AND SELF REFRESH MODE ● CLOCK ST...

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H5MS2562JFR-K3M Mobile DDR SDRAM 256Mbit (16M x 16bit) - Hynix Semiconductor

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