N-Channel MOSFET
Description
S T M4800S
S amHop Microelectronics C orp.
J un.07 2006
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
( m Ω ) Max
ID
8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
20 @ V G S = 10V 28 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS...
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