DatasheetsPDF.com

SDU02N25

SamHop Microelectronics
Part Number SDU02N25
Manufacturer SamHop Microelectronics
Description N-Channel MOSFET
Published Oct 15, 2014
Detailed Description Gre r Pro SDU/D02N25 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Field Effect Transistor PRODUCT SUMMARY V DSS...
Datasheet PDF File SDU02N25 PDF File

SDU02N25
SDU02N25

Overview
Gre r Pro SDU/D02N25 Ver 1.
1 S a mHop Microelectronics C orp.
N-Channel Field Effect Transistor PRODUCT SUMMARY V DSS 250V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ID 2A R DS(ON) ( Ω) Typ 3.
2 @ VGS=10V G S G D S SDU SERIES TO - 252AA(D-PAK) SDD SERIES TO - 251(I-PAK) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 250 ±30 TA=25°C TA=70°C 2 1.
5 6 10.
4 TA=25°C TA=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice.
Jun,07,2012 1 www.
samhop.
com.
tw SDU/D02N25 Ver 1.
1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=200V , VGS=0V Min 250 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VGS= ±30V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 3 3.
2 0.
9 4 4.
2 V ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance b VDS=25V,VGS=0V f=1.
0MHz 185 31 6.
1 pF pF pF SWITCHING CHARACTERISTICS tD(ON) tr tD(OFF) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=125V ID=1A VGS=10V RGEN=25 ohm VDS=125V,ID=1A,VGS=10V VDS=125V,ID=1A, VGS=10V 13.
4 12.
2 21.
5 5.
6 4.
36 1.
28 1.
48 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AN...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)