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M2N2G64TU8HG5B

Nanya
Part Number M2N2G64TU8HG5B
Manufacturer Nanya
Description Unbuffered DDR2 SO-DIMM
Published Oct 18, 2014
Detailed Description M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B 1GB: 128M x 64 / 2GB: 256M x 64 PC2-5300 / PC2-6400 Un...
Datasheet PDF File M2N2G64TU8HG5B PDF File

M2N2G64TU8HG5B
M2N2G64TU8HG5B

Overview
M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B 1GB: 128M x 64 / 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-667/800 64Mx16 (1GB)/128Mx8 (2GB) SDRAM G-Die Features • Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency tck – Clock Cycle Data Transfer Speed PC2-5300 -3C 5 333 3 667 PC2-6400 -AC 5 400 2.
5 800 MHz ns Mbps • Automatic and controlled precharge commands • Programmable Operation: - DIMM  Latency: 3, 4, 5 - Burst Type: Sequential or Interleave - Burst Length: 4, 8 - Operation: Burst Read and Write • 13/10/2 Addressing (1GB) • 14/10/2 Addressing (2GB) • 7.
8 s Max.
Average Periodic Refresh Interval • Serial Presence Detect • Gold contacts • 1GB module’s SDRAMs are 84-ball BGA Package • 2GB module’s SDRAMs are 60-ball BGA Package • RoHS compliance Unit • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) • 1GB: 128Mx64 Unbuffered DDR2 SO-DIMM based on 64M x16 DDR2 SDRAM G-Die devices.
• 2GB: 256Mx64 Unbuffered DDR2 SO-DIMM based on 128M x8 DDR2 SDRAM G-Die devices.
• Intended for 333MHz and 400MHz applications • Inputs and outputs are SSTL-18 compatible • VDD = VDDQ = 1.
8V ± 0.
1V • SDRAMs have 8 internal banks for concurrent operation • Differential clock inputs • Data is read or written on both clock edges • DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive clock edge • Auto Refresh (CBR) and Self Refresh Modes Description M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB)/256Mx64 (2GB) high-speed memory array.
M2N1G64TUH8G5F / M2S1G64TUH8G4F uses eight 64Mx16 84-ball BGA packaged devices and M2N2G64TU8HG5B / M2N2G64TU8HG4B uses sixteen 128Mx8 60-ball BGA packaged devices.
These DIMMs are manufactured using raw cards developed for broad indust...


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