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SVD12N60F

Silan Microelectronics
Part Number SVD12N60F
Manufacturer Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Published Oct 20, 2014
Detailed Description SVD12N60T/F_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD12N60T/F is an N-channel enhancement mode power ...
Datasheet PDF File SVD12N60F PDF File

SVD12N60F
SVD12N60F


Overview
SVD12N60T/F_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD12N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology.
The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ 12A,600V,RDS(on)(typ)=0.
58Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability...



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