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IRFHM830DTRPbF

International Rectifier
Part Number IRFHM830DTRPbF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Oct 28, 2014
Detailed Description IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.3 13 1.1 40 V mΩ nC Ω A 3.3mm x 3.3mm PQFN Qg (t...
Datasheet PDF File IRFHM830DTRPbF PDF File

IRFHM830DTRPbF
IRFHM830DTRPbF

Overview
IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.
3 13 1.
1 40 V mΩ nC Ω A 3.
3mm x 3.
3mm PQFN Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.
3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (<3.
4°C/W) 100% Rg tested Low Profile (< 1.
0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification results in ⇒ Increased Power Density Increased Reliability Increased...


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