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FDMA8884

Fairchild Semiconductor
Part Number FDMA8884
Manufacturer Fairchild Semiconductor
Description Single N-Channel PowerTrench MOSFET
Published Oct 29, 2014
Detailed Description FDMA8884 N-Channel Power Trench® MOSFET May 2014 FDMA8884 Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Fea...
Datasheet PDF File FDMA8884 PDF File

FDMA8884
FDMA8884

Overview
FDMA8884 N-Channel Power Trench® MOSFET May 2014 FDMA8884 Single N-Channel Power Trench® MOSFET 30 V, 6.
5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.
5 A „ Max rDS(on) = 30 mΩ at VGS = 4.
5 V, ID = 6.
0 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application „ Primary Switch Pin 1 D D G D Bottom Drain Contact D D S Drain Source D G S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS...


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