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SiA907EDJT-T1-GE3

Vishay
Part Number SiA907EDJT-T1-GE3
Manufacturer Vishay
Description Dual P-Channel 20 V (D-S) MOSFET
Published Oct 30, 2014
Detailed Description SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0....
Datasheet PDF File SiA907EDJT-T1-GE3 PDF File

SiA907EDJT-T1-GE3
SiA907EDJT-T1-GE3

Overview
SiA907EDJT www.
vishay.
com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.
057 at VGS = -4.
5 V 0.
095 at VGS = -2.
5 V ID (A) -4.
5 a -4.
5 a Qg (TYP.
) 4.
9 nC FEATURES • TrenchFET® power MOSFET • Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1500 V HBM • High speed switching • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 PowerPAK® SC-70-6L Dual S2 4 G2 5 D1 6 D1 D2 APPLICATIONS 1 S1 • Charger Switch, Load Switch for Portable Devices • Battery Management S1 S2 Marking Code: DM Ordering Information: SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free) SiA907EDJT-T4-GE3 (Lead (Pb)-free and Halogen-free) G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = ...


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