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KF4N80F

KEC
Part Number KF4N80F
Manufacturer KEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Nov 1, 2014
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description A KF4N80F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This planar stri...
Datasheet PDF File KF4N80F PDF File

KF4N80F
KF4N80F

Overview
SEMICONDUCTOR TECHNICAL DATA General Description A KF4N80F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
O B E G DIM MILLIMETERS L M J R FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)(Max)=2.
6 Qg(typ.
)= 17nC @VGS=10V D N N H 1 2 3 1.
GATE 2.
DRAIN 3.
SOURCE Q A B C D E F G H J K L M N O Q R _ 0.
2 10.
16 + _ 0.
2 15.
87 + _ 0.
2 2.
54 + _ 0.
1 0.
8 + _ 0.
1 3.
18 + _ 0.
1 3.
3 + _ 0.
2 12.
57 + _ 0.
1 0.
5 + _ 0.
5 13.
0 + _ 0.
1 3.
23 + 1.
47 MAX 1.
47 MAX _ 0.
2 2.
54 + _ 0.
2 6.
68 + _ 0.
2 4.
7 + _ 0.
2 2.
76 + K TO-220IS (1) MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 PD Derate above 25 Tj Tstg 0.
34 150 -55 150 W/ IDP EAS EAR dv/dt ) SYMBOL VDSS VGSS ID 2.
5* 11* 250 4.
7 4.
5 43 mJ S RATING 800 30 4* UNIT V V PIN CONNECTION D A G mJ V/ns W Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 2.
9 62.
5 /W /W * : Drain current limited by maximum junction temperature.
2012.
9.
5 Revision No : 0 1/6 KF4N80F ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN.
TYP.
MAX.
UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=800V, VGS=0V VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=3.
5A 800 2.
5 0.
8 2.
2 10 4.
5 100 2.
6 V V/ A V nA Dynamic Total...


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