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Si9926CDY

Vishay
Part Number Si9926CDY
Manufacturer Vishay
Description Dual N-Channel MOSFET
Published Nov 9, 2014
Detailed Description New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.018 ...
Datasheet PDF File Si9926CDY PDF File

Si9926CDY
Si9926CDY

Overview
New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.
018 at VGS = 4.
5 V 0.
022 at VGS = 2.
5 V ID (A)a 8 8 10 nC Qg (Typ.
) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 • DC/DC Converter - Game Machine - PC D1 D2 G1 G2 Ordering Information: Si9926CDY-T1-E3 (Lead (Pb)-free) Si9926CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 ± 12 8a 8a 8a, b, c 6.
7b, c 30 2.
6 1.
7b, c 5 1.
25 3.
1 2 2b, c 1.
3b, c - 55 to 150 mJ A Unit V TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 50 32 Maximum 62.
5 40 Unit °C/W Notes: a.
Package limited, TC = 25 °C.
b.
Surface Mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
Maximum under Steady State conditions is 110 °C/W.
Document Number: 68606 S09-0704-Rev.
B, 27-Apr-09 www.
vishay.
com 1 New Product Si9926CDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dyna...


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