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WTBV68

Winsem Technology
Part Number WTBV68
Manufacturer Winsem Technology
Description POWER TRANSISTOR
Published Nov 17, 2014
Detailed Description Winsem Technology Corp. High Voltage NPN Power Transistor Features • High Voltage • Very High Switch Speed • BVCEO : 400...
Datasheet PDF File WTBV68 PDF File

WTBV68
WTBV68

Overview
Winsem Technology Corp.
High Voltage NPN Power Transistor Features • High Voltage • Very High Switch Speed • BVCEO : 400V • BVCBO : 700V • IC : 0.
6A • VCE(SAT) : 1.
5V@Ic / IB=200mA/ 20mA • Silicon Triple Diffused Type Application • Electronic Ballasts • Adapter • Lighting WTBV68 POWER TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Version A11 Max Rating 700 400 9 0.
6 1.
2 1.
0 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp.
WTBV68 POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Min Typ Max Unit Collector-Base Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC = 1mA, IB=0 IC = 1mA, IE=0 700 ─ 400 ─ ─ ─ V V Emitter- Base Breakdown Voltage BVEBO IE = 1mA, IC=0 9─ ─ V Collector Cutoff Current ICBO VCB = 700V, IE=0 ── 1㎂ Emitter Cutoff Current IEBO VEB = 7V, IC=0 ── 1㎂ hFE1 VCE = 10V, IC=10mA 15 ─ 40 DC Current Gain hFE2 VCE = 10V, IC=100mA 25 ─ 40 hFE3 VCE = 10V, IC=280mA 12 ─ 24 VCE(SAT1) IC/IB = 50mA / 10mA ─ 0.
2 0.
4 Collector-Emitter Saturation Voltage VCE(SAT2) IC/IB = 100mA / 10mA ─ 0.
45 1 V VCE(SAT3) IC/IB = 200mA / 20mA ─ 1 1.
5 Base-Emitter Saturation Voltage VBE(SAT1) IC/IB = 50mA / 10mA VBE(SAT2) IC/IB = 100mA / 10mA ─ ─ ─1 ─ 1.
2 V Dynamic Frequency Output Capacitance fT VCE=10V, IC=0.
1A Cob VCB=10V, f=01.
MHz 4─ ─ MHz ─ 21 ─ pF Resistive Load Switching Time (Ratings) Rise Time tr Storage Time tSTG Fall Time tf Vcc=125V, IC=100mA, IB1 = IB2 = 20mA, tp = 25uS Duty Cycle ≦ 1% ─ ─ ─ 1.
1 ─ 24 0.
2 0.
7 uS uS uS Version A11 Page 2 Winsem Technology Corp.
Electrical Characteristic Curves Static Characteristics WTBV68 POWER TRANSISTOR DC Current Gain VCE(SAT) v.
s.
VBE...


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