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B968

Panasonic
Part Number B968
Manufacturer Panasonic
Description 2SB968
Published Dec 1, 2014
Detailed Description Power Transistors 2SB968 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD12...
Datasheet PDF File B968 PDF File

B968
B968

Overview
Power Transistors 2SB968 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 6.
5±0.
1 5.
3±0.
1 4.
35±0.
1 Unit: mm 2.
3±0.
1 0.
5±0.
1 7.
3±0.
1 1.
8±0.
1 s Features q Possible to solder the radiation fin directly to printed cicuit board q High collector to emitter VCEO q Large collector power dissipation PC s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –50 –40 –5 –3 –1.
5 20 150 –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ICBO ICEO IEBO VCBO VCEO hFE* VCE(sat) VBE(sat) fT Cob VCB = –20V, IE = 0 VCE = –10V, IB = 0 VEB = –5V, IC = 0 IC = –1mA, IE = 0 IC = –2mA, IB = 0 VCE = –5V, IC = –1A IC = –1.
5A, IB = – 0.
15A IC = –2A, IB = – 0.
2A VCB = –5V, IE = 0.
5A, f = 200MHz VCB = –20V, IE = 0, f = 1MHz 2.
5±0.
1 0.
8max 1.
0±0.
2 0.
93±0.
1 1.
0±0.
1 0.
1±0.
05 0.
5±0.
1 2.
3±0.
1 4.
6±0.
1 0.
75±0.
1 123 6.
5±0.
2 5.
35 4.
35 1:Base 2:Collector 3:Emitter U Type Package Unit: mm 5.
5±0.
2 1.
8 13.
3±0.
3 2.
3 2.
3 0.
75 0.
6 123 2.
3±0.
1 6.
0 0.
5±0.
1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) min typ max Unit –1 µA –100 µA –10 µA –50 V –40 V 50 220 –1 V –1.
5 V 150 MHz 45 pF *hFE Rank classification Rank P hFE 50 to 100 Q 80 to 160 R 120 to 220 1 Collector power dissipation PC (W) Power Transistors PC — Ta 32 TC=Ta 28 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Collector current IC (A) –4.
0 –3.
5 –3.
0 –2.
5 –2.
0 –1.
5 –1.
0 – 0.
5 IC —...


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