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VMMK-2503

AVAGO
Part Number VMMK-2503
Manufacturer AVAGO
Description 1 to 12 GHz GaAs Wideband Amplifier
Published Dec 12, 2014
Detailed Description VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Avago’s VMMK-2503 is an eas...
Datasheet PDF File VMMK-2503 PDF File

VMMK-2503
VMMK-2503


Overview
VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package (WLP).
The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a transmitter driver in many applications from 1–12GHz.
A 5V, 65mA power supply is required for optimal performance.
This amplifier is fabricated with enhancement E-pHEMT technology and industry leading wafer level package.
The GaAsCap wafer level package is small and ultra thin yet can be handled and placed with standard 0402 pick and place assembly.
This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 : systems.
WLP 0402, 1mm x 0.
5mm x 0.
25 mm GY Pin Connections (Top View) Features x 1 x 0.
5 mm Surface Mount Package x Ultrathin (0.
25mm) x Unconditionally Stable x Ultrawide Bandwidth x Gain Block or Driver Amplifier x RoHS6 + Halogen Free Typical Performance (Vdd = 5.
0V, Idd = 65mA) x Output IP3: 27dBm x Small-Signal Gain: 13.
5dB x Noise Figure: 3.
4dB Applications x 2.
4 GHz, 3.
5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications x 802.
16 & 802.
20 BWA systems x Radar, radio and ECM systems x UWB Input GY Output / Vdd Input Amp Output / Vdd Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A) ESD Human Body Model (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.
Note: “G” = Device Code “Y” = Month Code Table 1.
Absolute Maximum Ratings [1] Sym Parameters/Condition Vd Supply Voltage (RF Output) [2] Id Device Current [2] Pin, max Pdiss Tch CW RF Input Power (RF Input) [3] Total Power Dissipation Max channel temperature TSTG Storage Temperature Tjc Thermal Resistance [4] Notes 1.
Operation of this device above any one...



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