SILICON N-CHANNEL IGBT
Description
GT40M101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT40M101
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement−Mode
: tf = 0.4µs (Max.) : VCE(sat) = 3.4V (Max.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage Gate−Emitter Voltage
Collector Cu...
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