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2SC3875

Elite
Part Number 2SC3875
Manufacturer Elite
Description NPN Epitaxial Silicon Transistor
Published Dec 15, 2014
Detailed Description 2SC3875 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR SOT-23 Collector-Emitter Voltage: VCEO = 50V Coll...
Datasheet PDF File 2SC3875 PDF File

2SC3875
2SC3875

Overview
2SC3875 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR SOT-23 Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 60 50 5 150 150 150 -55~+150 V V V mA mW oC oC Tolerance : 0.
1mm Dimensions (Unit : mm) 1.
Emitter 2.
Base 3.
Collector Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT IC= 100µA, IE= 0 IC= 1mA, IB= 0 IE= 100µA, IC= 0 VCB= 60V, IE= 0 VCE= 45V, IB= 0 VEB= 5V, IC= 0 VCE= 6V, IC= 2mA IC= 100mA, IB= 10mA IC= 100mA, IB= 10mA VCE= 10V, IC= 1mA f= 100MHz Min Max Unit 60 V 50 V 5V 0.
1 µA 0.
2 µA 0.
1 µA 70 700 0.
25 V 1V 80 MHz hFE CLASSIFICATION Classification G hFE 70-140 Y 120-240 GR 200-400 BL 350-700 Device Marking 2SC3875-G=ALO ; 2SC3875-Y=ALY ; 2SC3875-GR=ALG ; 2SC3875-G=ALL Elite Enterprises (H.
K.
) Co.
, Ltd.
Flat 2505, 25/F.
, Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.
K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.
com.
hk Part No.
: 2SC3875 Page: 1 / 1 ...


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