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IXGQ28N120B

IXYS
Part Number IXGQ28N120B
Manufacturer IXYS
Description High Voltage IGBT
Published Jan 5, 2015
Detailed Description High Voltage IGBT with Diode IXGQ 28N120B IXGQ 28N120BD1 V CES IC25 VCE(sat) tfi(typ) = 1200 V = 50 A = 3.5 V = 160 ns...
Datasheet PDF File IXGQ28N120B PDF File

IXGQ28N120B
IXGQ28N120B

Overview
High Voltage IGBT with Diode IXGQ 28N120B IXGQ 28N120BD1 V CES IC25 VCE(sat) tfi(typ) = 1200 V = 50 A = 3.
5 V = 160 ns Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms V GE = 15 V, T J = 125°C, R G = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg M Mounting torque d Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Weight D1 Maximum Ratings 1200 1200 V V ±20 V ±30 V 50 A 28 A 150 A I = 60 CM @0.
8 VCES 250 A W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 1.
13/10 Nm/lb.
in.
300 °C 6g TO-3P (IXGQ) G CE G =...


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