500V N-Channel MOSFET
Description
Feb 2009
PFP13N50/PFF13N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half bridge ...
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