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GP1600FSM12

Dynex Semiconductor

Single Switch IGBT Module Advance Information


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GP1600FSM12 GP1600FSM12 Single Switch IGBT Module Advance Information DS5451-1.2 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) 1200V 2.7V (max) 1600A (max) 3200A High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates APPLICATIONS s s s s External connection C1 Aux C ...



Dynex Semiconductor

GP1600FSM12

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