DatasheetsPDF.com

GP401LSS18

Dynex Semiconductor
Part Number GP401LSS18
Manufacturer Dynex Semiconductor
Description Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information
Published Mar 23, 2005
Detailed Description GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January...
Datasheet PDF File GP401LSS18 PDF File

GP401LSS18
GP401LSS18

Overview
GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.
3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module.
Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion.
The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.
Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching.
The IGBT has a wide reverse bias safe ope...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)