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C3074

Toshiba Semiconductor

2SC3074


Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SA1244 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector...



Toshiba Semiconductor

C3074

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