DatasheetsPDF.com

AF9926N

Anachip
Part Number AF9926N
Manufacturer Anachip
Description N-Channel Enhancement Mode Power MOSFET
Published Feb 5, 2015
Detailed Description N-Channel Enhancement Mode Power MOSFET AF9926N „ Features - Capable of 2.5V Gate Drive - Low On-resistance - Low Driv...
Datasheet PDF File AF9926N PDF File

AF9926N
AF9926N

Overview
N-Channel Enhancement Mode Power MOSFET AF9926N „ Features - Capable of 2.
5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
„ Product Summary BVDSS (V) 20 RDS(ON) (mΩ) 30 ID (A) 6 „ Pin Assignments S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 „ Pin Descriptions Pin Name S1/2 G1/2 D1/2 Description Source Gate Drain „ Ordering information A X 9926N X X X Feature F :MOSFET PN Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information.
Anachip Corp.
reserves the rights to modify the product specification without notice.
No liability is assumed as a result of the use of this product.
No rights under any patent accompany the sale of the product.
Rev.
1.
1 Sep 5, 2005 1/6 N-Channel Enhancement Mode Power MOSFET AF9926N „ Absolute Maximum Ratings Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Parameter ID Continuous Drain Current (Note 1) IDM PD TSTG TJ Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25ºC TA=70ºC TA=25ºC „ Thermal Data Symbol Parameter Rthj-amb Thermal Resistance Junction-ambient (Note 1) Max.
Rating 20 ±12 6 4.
8 26 2 0.
016 -55 to 150 -55 to 150 Units V V A A W W/ºC ºC ºC Maximum 62.
5 Units ºC/W „ Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter Test Conditions Min.
BVDSS ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Sour...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)