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K14A55D

Toshiba
Part Number K14A55D
Manufacturer Toshiba
Description TK14A55D
Published Feb 8, 2015
Detailed Description TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK14A55D Switching Regulator Applications ...
Datasheet PDF File K14A55D PDF File

K14A55D
K14A55D

Overview
TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK14A55D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.
31 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 6.
5 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range ...


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