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K30A06J3A

Toshiba Semiconductor
Part Number K30A06J3A
Manufacturer Toshiba Semiconductor
Description TK30A06J3A
Published Feb 8, 2015
Detailed Description TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applicati...
Datasheet PDF File K30A06J3A PDF File

K30A06J3A
K30A06J3A

Overview
TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.
) z High forward transfer admittance: |Yfs| = 34 S (typ.
) z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Sto...


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