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C3075

Toshiba Semiconductor
Part Number C3075
Manufacturer Toshiba Semiconductor
Description 2SC3075
Published Feb 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 2SC3075 Switching Regulator and High Voltage...
Datasheet PDF File C3075 PDF File

C3075
C3075

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications Unit: mm • Excellent switching times: tr = 1.
0 μs (max) tf = 1.
5 μs (max), (IC = 0.
5 A) • High collector breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 500 V 400 V 7 V 0.
8 A 1.
5 0.
5 A 1.
0 W 10 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the r...


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