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D669

Hitachi Semiconductor
Part Number D669
Manufacturer Hitachi Semiconductor
Description 2SD669
Published Feb 12, 2015
Detailed Description 2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outlin...
Datasheet PDF File D669 PDF File

D669
D669

Overview
2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 123 1.
Emitter 2.
Collector 3.
Base 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC PC * 1 Tj Tstg Ratings 2SD669 180 120 5 1.
5 3 1 20 150 –55 to +150 2SD669A 180 160 5 1.
5 3 1 20 150 –55 to +150 Unit V V V A A W W °C °C 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Collector to base breakdown voltage V(BR)CBO 180 — — 180 — — Collector to emitter breakdown voltage V(BR)CEO 120 — — 160 — — Emitter to base breakdown voltage V(BR)EBO 5 —— 5 —— Collector cutoff current ICBO DC current transfer ratio hFE1*1 hFE2 Collector to emitter saturation voltage VCE(sat) —— 60 — 30 — —— 10 — 320 60 — 30 1— — — — — 10 200 — 1 Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob — — 1.
5 — — 1.
5 — 140 — — 140 — — 14 — — 14 — Notes: 1.
The 2SD669 and 2SD669A are grouped by hFE1 as follows.
2.
Pulse test.
Unit Test conditions V IC = 1 mA, IE = 0 V IC = 10 mA, RBE = ∞ V IE = 1 mA, IC = 0 µA V V MHz pF VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz 2SD669 2SD669A B 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 — Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case temperature TC (°C) Area of Safe Operation 3 (13.
3 V, 1.
5 A) 1.
0 (40 V, 0.
5 A) 0.
3 DC Operation(TC = 25°C) 0.
1 (120 V, 0.
04 A) 0.
03 (160 V, 0.
02A) 2SD669 2SD669A 0.
01 1 3...


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