Power MOSFET
Description
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA110N055T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 110 7.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C TC = 25° C, pulse width limi...
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