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IXTH200N075T

IXYS Corporation
Part Number IXTH200N075T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avala...
Datasheet PDF File IXTH200N075T PDF File

IXTH200N075T
IXTH200N075T

Overview
Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.
0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 75 75 ± 20 200 75 540 25 750 V V V A A A A mJ 3 V/ns 430 W -55 .
.
.
+175 175 -55 .
.
.
+175 °C °C °C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
5.
5 g 6g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min.
Typ.
Max.
75 V 2.
0 4.
0 V ± 200 nA 5 μA 250 μA 4.
0 5.
0 mΩ TO-247 (IXTH) G DS TO-3P (IXTQ) (TAB) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2006 IXYS CORPORATION All rights reserved DS99634 (11/06) IXTH200N075T IXTQ200N075T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.
5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf Qg(on) Qgs Qgd VGS= 10 V, VDS = 0.
5 VDSS, ID = 25 A RthJC RthCH TO-3P TO-247 Characteristic Values Min.
Typ.
Max.
70 110 S 6800 1040 190 pF pF pF 31 ns 57 ns 54 ns 52 ns 160 nC 35 nC 43 nC 0.
25 0.
21 0.
35 °C/W °C/W °C/W Source-Drain Diode Symbol ...


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