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IXTA152N085T7

IXYS Corporation

Power MOSFET


Description
Preliminary Technical Information TrenchMVTM IXTA152N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 152 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, R...



IXYS Corporation

IXTA152N085T7

PDF File IXTA152N085T7 PDF File


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