Power MOSFET
Description
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA180N10T IXTP180N10T
VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ
TO-263 (IXTA)
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current limit, RMS TC = 25°C, pulse width ...
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