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IXTH200N10T

IXYS Corporation
Part Number IXTH200N10T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ...
Datasheet PDF File IXTH200N10T PDF File

IXTH200N10T
IXTH200N10T

Overview
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Mounting torque TO-247 TO-3P Maximum Ratings 100 100 V V ± 30 V 200 A 75 A 500 A 40 A 1.
5 J 550 W -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 1.
13 / 10 °C °C °C °C °C Nm/lb.
in.
6.
0 g 5.
5 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th)...


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