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FX606

Sanyo Semicon Device
Part Number FX606
Manufacturer Sanyo Semicon Device
Description Ultrahigh-Speed Switching Applications
Published Mar 23, 2005
Detailed Description Ordering number:EN4889 FX606 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Composite type...
Datasheet PDF File FX606 PDF File

FX606
FX606

Overview
Ordering number:EN4889 FX606 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX606 is formed with two chips, each being equivalent to the 2SK1470, placed in one package.
· Matched pair characteristics.
Package Dimensions unit:mm 2120 [FX606] 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO:XP6 (Bottom view) Switching Time Test Circuit Electrical Connection 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD PT Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C, 1 unit Mounted on ceramic board (750mm2×0.
8mm) 1 unit Mounted on ceramic board (750mm2×0.
8mm) Conditions Ratings 60 ±15 2 8 6 1.
5 2 150 –55 to +150 Unit V V A A W W W ˚C ˚C · Marking:606 Continued on next page.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/71095MO(KOTO) TA-0112 No.
4889-1/4 FX606 Continued from preceding page.
Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | Yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±12, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=1A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V,...


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