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RF1S630SM

Fairchild Semiconductor
Part Number RF1S630SM
Manufacturer Fairchild Semiconductor
Description N-Channel Power MOSFETs
Published Feb 22, 2015
Detailed Description Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement...
Datasheet PDF File RF1S630SM PDF File

RF1S630SM
RF1S630SM

Overview
Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.
400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17412.
Ordering Information PART NUMBER...


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