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PTFB182503EL

Infineon Technologies
Part Number PTFB182503EL
Manufacturer Infineon Technologies
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Feb 27, 2015
Detailed Description PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB18250...
Datasheet PDF File PTFB182503EL PDF File

PTFB182503EL
PTFB182503EL

Overview
PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB182503EL H-33288-6 PTFB182503FL H-34288-4/2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.
85 A, ƒ = 1842 MHz, 3GPP WCDMA signal, PAR = 7.
5 dB, 10 MHz carrier spacing -30 35 -35 Efficiency -40 30 25 IM3 -45 -50 ACPR 20 15 10 -55 38 40 42 44 46 48 Average Output Power (dBm) 5 50 Features • Broadband internal input and output matching • Enhanced for use in DPD error correction systems • Typical two-carrier WCDMA performance, 1880 MHz, 30 V - Average output power = 50 W - Linear gain = 19 dB - Drain efficiency = 28 % - Intermodulation distortion = –35 dBc • Typical CW performance, 1880 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 55% • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers • Integrated ESD protection.
Human Body Model, Class 2 (minimum) • Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power • Pb-free, RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.
85 A, POUT = 50 W average ƒ1 = 1840 MHz, ƒ2 = 1845 MHz, 3GPP signal, channel bandwidth = 3.
84 MHz , peak/average = 7.
5 dB @ 0.
01% CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps hD IMD All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precaution...


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