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BAT24-02LS

Infineon Technologies

Silicon Schottky Diode


Description
BAT24-02LS Single silicon RF Schottky diode Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for mixer and detector functions in applications ...



Infineon Technologies

BAT24-02LS

PDF File BAT24-02LS PDF File


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