DatasheetsPDF.com

MMBT8550D

SEMTECH
Part Number MMBT8550D
Manufacturer SEMTECH
Description PNP Silicon Epitaxial Planar Transistor
Published Mar 1, 2015
Detailed Description MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary...
Datasheet PDF File MMBT8550D PDF File

MMBT8550D
MMBT8550D


Overview
MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended.
SOT-23 Plastic Package Absolute Maximum Ratings (T a = 25 OC) Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCEO -VCBO -VEBO -IC Ptot Tj TS Value 25 40 6 600 200 150 -55 to +150 Unit V V V mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.
: (495) 795-0805 Факс: (495) 234-1603 Эл.
почта: info@rct.
ru Веб: www.
rct.
ru ® MMBT8550C / MMBT8550D Characteristics at Tamb=25 OC DC Current Gain at -VCE=1V, -IC=100mA MMBT8550C MMBT8550D at -VCE=1V, -IC=500mA Collector Cutoff Current at -VCB=35V Collector Saturation Voltage at -IC=500mA, -IB=50mA Base Saturation Voltage at -IC=500mA, -IB=50mA Collector Emitter Breakdown Voltage at -IC=2mA Collector Base Breakdown Voltage at -IC=10µA Emitter Base Breakdown Voltage at -IE=100µA Gain Bandwidth Product at -VCE=5V, -IC=10mA, f=50MHz Collector Base Capacitance at -VCB=10V, f=1MHz Thermal Resistance Junction to Ambient Symbol hFE hFE hFE -ICBO -VCE(sat) -VBE(sat) -V(BR)CEO -V(BR)CBO -V(BR)EBO fT CCBO RthA Min.
100 160 40 - - - 25 40 6 - - Typ.
- - - - - - - 100 12 - Max.
250 400 - 100 0.
5 1.
2 - - - - 200 Unit - nA V V V V V MHz pF K/W SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005 MMBT8550C / MMBT8550D Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case W ST 8550 1 0.
8 Ptot 0.
6 0.
4 0.
2 0 0 100 200 oC Tamb Pulse thermal resistance versus pulse duration Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case K/W 103 ST 8550 5 2 102 5 0.
5 rthA 2 0.
2 0.
1 10 0.
05 5 0.
02 2 1 0.
01 5 0.
0...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)