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VS-GT50TP60N
Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 50 A
INT-A-PAK
FEATURES
Low VCE(on) trench IGBT technology 5 μs short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 °C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper...