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QL63D5SA

ETC
Part Number QL63D5SA
Manufacturer ETC
Description InGaAlP Laser Diode
Published Mar 3, 2015
Detailed Description QL63D5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL63D5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well...
Datasheet PDF File QL63D5SA PDF File

QL63D5SA
QL63D5SA

Overview
QL63D5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL63D5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Optical Leveler and Modules.
♦ APPLICATION Pointer Optical Leveler Laser Module ♦ FEATURES Visible Light Output: λp = 635 nm (TM Mode) Optical Power Output: 5 mW CW Package Type: TO-18 Built-in Photo Diode for Monitoring Laser Output ♦ ELECTRICAL CONNECTION Bottom View Pin Configuration ♦ ABSOLUTE MAXIMUM RATING at Tc = 25° C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 7 2 30 -10 .
.
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+50 -40 .
.
.
+85 Unit mW V V °C °C ♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc = 25° C Items Symbols Min.
Typ.
Max.
Unit Condition Optical Output Power Po - 5 - mW - Threshold Current Ith - 35 50 mA - Operating Current Iop - 45 60 mA P...


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