High Power Infrared Laser diode
Description
RLT83500G
TECHNICAL DATA
High Power Infrared Laser Diode
Lasing wavelength: 830 nm typ. Max. optical power: 500 mW, cw Emitting Aperture: 1x50 μm² Package: 9 mm
PIN CONNECTION:
1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode
Specification (Tc = 25°C)
CHARACTERISTIC
Optical Output Power Threshold Current Operation Current...
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