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FZ800R33KF2C

Infineon
Part Number FZ800R33KF2C
Manufacturer Infineon
Description IGBT-Module
Published Mar 5, 2015
Detailed Description TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R33KF2C IGBT,Wechselrichter/IGBT,Inver...
Datasheet PDF File FZ800R33KF2C PDF File

FZ800R33KF2C
FZ800R33KF2C

Overview
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R33KF2C IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Tvj = -25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VorläufigeDaten PreliminaryData VCES  IC nom IC  ICRM  Ptot  VGES  3300 3300 800 1300 1600 9,60 +/-20 V  A A A  kW V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 800 A, VGE = 15 V IC = 800 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 80,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V .
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+15 V, VCE = 1800V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 3300 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 800 A, VCE = 1800 V VGE = ±15 V RGon = 1,4 Ω, CGE = 150 nF Tvj = 25°C Tvj = 125°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 800 A, VCE = 1800 V VGE = ±15 V RGon = 1,4 Ω, CGE = 150 nF Tvj = 25°C Tvj = 125°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 800 A, VCE = 1800 V VGE = ±15 V RGoff = 1,8 Ω, CGE = 150 nF Tvj = 25°C Tvj = 125°C Fallzeit,induktiveLast...


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