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FYPF2006DN

Fairchild Semiconductor
Part Number FYPF2006DN
Manufacturer Fairchild Semiconductor
Description SCHOTTKY BARRIER RECTIFIER
Published Mar 23, 2005
Detailed Description FYPF2006DN FYPF2006DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring ...
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FYPF2006DN
FYPF2006DN

Overview
FYPF2006DN FYPF2006DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-220F 1.
Anode 2.
Cathode 3.
Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Maximum Average Rectified Current Maximum Forward Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature @ TC = 120°C Value 60 60 20 200 -40 to +150 Units V V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 2.
8 Units °C/W Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current @ rated VR TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value 0.
58 0.
52 0.
71 0.
65 mA 1 50 Units V IRM * * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev.
A, May 2000 FYPF2006DN Typical Characteristics 100 100 TJ=150 C o Forward Current, I F[A] 10 Reverse Current, I R[mA] 10 TJ=125 C o 1 TJ=75 C o 1 TJ=125 C 0.
1 o 0.
1 o TJ=75 C TJ=25 C o o 0.
01 TJ=25 C 0.
01 0.
0 0.
001 0.
5 1.
0 1.
5 2.
0 0 20 40 60 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Figure 1.
Typical Forward Voltage Characteristics (per diode) Figure 2.
Typical Reverse Current vs.
Reverse Voltage (per diode) 10 Junction Capacitance, C J[pF] 1000 Transient Thermal Impedance [ C/W] TJ=25 C o o 1 100 0 20 40 60 0.
1 100µ 1m 10m 100m 1 10 Reverse Voltage, VR[V] Pulse Duration [s] Figure 3.
Typical Junction Capacitance (per diode) Figure 4.
Thermal Impedance Characteristics (per diode) 25 250 20 DC Max.
Forward Surge Current, I FSM[A] 80 100 ...


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