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ME06N10

Part Number	ME06N10
Manufacturer	Matsuki
Description	N-Channel MOSFET
Published	Mar 9, 2015
Detailed Description	N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode...
Datasheet	ME06N10 PDF File

Overview

N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES ● RDS(ON)≦200mΩ@VGS=10V ● RDS(ON)≦260mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exception...

Similar Datasheet

ME06N10 N-Channel MOSFET - Matsuki
ME06N10-G N-Channel MOSFET - Matsuki

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