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FTA10N60GZ

ark
Part Number FTA10N60GZ
Manufacturer ark
Description 600V N-Channel MOSFET
Published Mar 25, 2015
Detailed Description 600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 54nC)  Fast Switching  100% Aval...
Datasheet PDF File FTA10N60GZ PDF File

FTA10N60GZ
FTA10N60GZ

Overview
600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 54nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power FTP10N60/FTA10N60 BVDSS 600V RDS(ON) (Max.
) 0.
75Ω ID 10.
0A Ordering Information Part Number Package FTP10N60 TO-220 FTP10N60G TO-220 FTA10N60 TO-220F FTA10N60G TO-220F FTA10N60Z TO-220FG FTA10N60GZ TO-220FG Marking FTP10N60 FTP10N60G FTA10N60 FTA10N60G FTA10N60Z FTA10N60GZ Remark RoHS Halogen-free RoHS Halogen-free RoHS Halogen-free Absolute Maximum Ratings Symbol Parameter VDSS Drain-to-Source Voltage[1] ID Continuous Drain Current ID@100℃ Continuous Drain Current IDM Pulsed Drain Current, VGS@10V[2] Power Dissipation PD Derating Factor above 25℃ TC=25℃ unless otherwise specified FTP10N60 FTA10N60 Unit 600 V 10.
0 10.
0* Figure 3 A Figure 6 156 50 W 1.
25 0.
4 W/℃ VGS EAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy L=12mH, ID=10A Peak Diode Recovery dv/dt[3] ±30 V 600 mJ 4.
5 V/ns TL Soldering Temperature Distance of 1.
6mm from case for 10 seconds 300 TJ and TSTG Operating and Storage Temperature Range -55 to 150 *Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
℃ ARK Microelectronics Co.
, Ltd.
w w w.
a r k - m i c r o .
c o m 1 / 11 Rev.
2.
1 May.
2012 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient FTP10N60/FTA10N60 FTP10N60 0.
8 60 FTA10N60 2.
5 60 Unit ℃/W Electrical Characteristics OFF Characteristics Symbol Parameter Min.
BVDSS Drain-to-Source Breakdown Voltage 600 △BVDSS/△TJ Breakdown Voltage Temperature Coefficient -- -IDSS Drain-to-Source Leakage Current -- -IGSS Gate-to-Source Leakage Current -- Typ.
-- 0.
7 ----- Max.
...


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