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B926

Part Number	B926
Manufacturer	FGX
Description	PNP Silicon Transistor
Published	Mar 30, 2015
Detailed Description	■■APPLICATION： Power supplies, relay drivers, lamp drivers, electrical equipment. ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER ...
Datasheet	B926 PDF File

Overview

■■APPLICATION： Power supplies, relay drivers, lamp drivers, electrical equipment.
■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector Power Dissipation PC 750 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150℃ B926 —PNP silicon — ■■ELECTRICAL CHARACTERISTICS （Ta=25℃） PARAMETER SYMBOL MIN.
TYP.
MAX.
UNIT TEST CONDITION DC Current Gain hFE 100 560 VCE= -2V，Ic= -100mA Collector Cut-off Current ICBO -0.
1 µA VCB=-20 V，IE=0 Emitter Cut-off Current IEBO -0.
1 µA VEB= -4V，Ic=0 Collector-Base Breakdown Vol...

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