Silicon NPN Darlington Power Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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