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IPI80P03P3L-04

Infineon
Part Number IPI80P03P3L-04
Manufacturer Infineon
Description Power-Transistor
Published Apr 9, 2015
Detailed Description Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS-P Power-Transistor Feature • P-Channel • Enh...
Datasheet PDF File IPI80P03P3L-04 PDF File

IPI80P03P3L-04
IPI80P03P3L-04

Overview
Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS-P Power-Transistor Feature • P-Channel • Enhancement mode • Logic Level • Automotive AEC Q101 qualified P- TO262 -3-1 Product Summary VDS -30 V RDS(on) max.
SMD version 4 mΩ ID -80 A P- TO263 -3-2 P- TO220 -3-1 • Green package (lead free) • MSL1 up to 260°C peak reflow temperature • 175°C operating temperature • Avalanche rated • dv/dt rated Type IPP80P03P3L-04 Package Ordering Code P- TO220 -3-1 - Marking 3P03L04 Gate pin1 Drain pin 2 Source pin 3 IPB80P03P3L-04 P- TO263 -3-2 - 3P03L04 IPI80P03P3L-04 P- TO262 -3-1 - 3P03L04 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=-80 A , VDD=-25V, RGS=25Ω ID ID puls EAS Reverse diode dv/dt dv/dt IS=-80A, VDS=-24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage VGS Power dissipation TC=25°C Ptot Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg Value -80 -80 -320 432 -6 ±20 200 -55.
.
.
+175 55/175/56 Unit A mJ kV/µs V W °C Page 1 2004-03-04 Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 2) Symbol Values Unit min.
typ.
max.
RthJC RthJA RthJA - 0.
5 0.
75 K/W - - 62 - - 62 - - 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
Static Characteristics Drain-source breakdown voltage V(BR)DSS -30 - -V VGS=0, ID=-250µA Gate threshold voltage, VGS = VDS ID=-430µA Zero gate voltage drain current VDS=-30V, VGS=0, Tj=25°C VDS=-30V, VGS=0, Tj=150°C3) Gate-source leakage current VGS=±20V, VDS=0 Drain-source on-state resistance4) VGS=-4.
5V, ID=-50A VGS=-4.
5V, ID=-50...


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