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IPD49CN10NG

Infineon

Power Transistor


Description
OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Product Summary V DS R DS(on),max (TO252) ID 100 V 49 mΩ 20 A 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to J...



Infineon

IPD49CN10NG

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