2SK2467
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2467
2SK2467
High-Power Amplifier Application
High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 4.0 S (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)...
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