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2SAR533D

Rohm
Part Number 2SAR533D
Manufacturer Rohm
Description PNP -3.0A -50V Middle Power Transistor
Published Apr 21, 2015
Detailed Description 2SAR533P / 2SAR533D PNP -3.0A -50V Middle Power Transistor Datasheet lOutline Parameter Value MPT3 VCEO IC -50V -...
Datasheet PDF File 2SAR533D PDF File

2SAR533D
2SAR533D

Overview
2SAR533P / 2SAR533D PNP -3.
0A -50V Middle Power Transistor Datasheet lOutline Parameter Value MPT3 VCEO IC -50V -3.
0A Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR533P / 2SCR533D 3) Low VCE(sat) VCE(sat)= -0.
4V Max.
(IC/IB= -1A/ -50mA) 4) Lead Free/RoHS Compliant.
2SAR533P (SC-62) CPT3 Collector Base Emitter 2SAR533D (SC-63) lInner circuit Collector Base Emitter lPackaging specifications Part No.
Package 2SAR533P 2SAR533D MPT3 CPT3 Package size (mm) 4540 6595 lApplications Motor driver , LED driver Power supply Taping code T100 TL Reel size (mm) Tape width (mm) Basic ordering unit (pcs) 180 12 1,000 330 16 2,500 Marking MM AR533 lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Collector-base voltage VCBO -50 Collector-emitter voltage VCEO -50 Emitter-base voltage VEBO -6 Collector current Power dissipation DC Pulsed 2SAR533P 2SAR533D IC ICP *1 PD -3.
0 -6.
0 0.
5 *2 2.
0 *3 1.
0 *4 10 *5 Junction temperature Tj 150 Range of storage temperature Tstg -55 to +150 *1 Pw=10ms , single pulse *2 Each terminal mounted on a reference land *3 Mounted on a ceramic board (40×40×0.
7mm) *4 Mounted on a substrate *5 TC=25°C Unit V V V A A W W W W °C °C www.
rohm.
com © 2013 ROHM Co.
, Ltd.
All rights reserved.
1/7 2013.
05 - Rev.
B 2SAR533P / 2SAR533D Data Sheet lElectrical characteristics(Ta = 25°C) Parameter Symbol Collector-emitter breakdown voltage BVCEO Collector-base breakdown voltage Emitter-base breakdown voltage BVCBO BVEBO Conditions IC = -1mA IC = -100mA IE = -100mA Collector cut-off current ICBO VCB = -50V Min.
Typ.
Max.
Unit -50 - - V -50 - - V -6 - - V - - -1 mA Emitter cut-off current IEBO VEB = -4V Collector-emitter saturation voltage VCE(sat) *1 IC = -1A, IB = -50mA DC current gain hFE VCE = -3V, IC = -50mA Transition frequency Output capacitance fT VCE = -10V, IE = -500mA f=100MHZ Cob VCB = -10V, IE = 0A f ...


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